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VESD05A1-02V
Vishay Semiconductors
ESD Protection Diode in SOD523
Features
* Small SOD523 package * Low leakage current e3 * ESD protection to IEC 61000-4-2 30 kV (Air) * ESD protection to IEC 61000-4-2 30 kV (Contact) * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
A
2
Mechanical Data
Case: SOD523 (plastic package). Lead free; non magnetic Molding Compound Flammability Rating: UL 94 V-0 Terminals: High temperature soldering guaranteed: 260 C/10 sec. at terminals Weight: 1.5 mg Packaging Codes/Options: GS18 = 10 k per 13" reel (8 mm tape), 10 k/box GS08 = 3 k per 7" reel (8 mm tape), 15 k/box
Marking:
Square = Cathode mark A = Date Code (Example only) = Type Code for VESD05A1-02V
F
Absolute Maximum Ratings
Ratings at 25 C, ambient temperature unless otherwise specified Parameter ESD Air Discharge per IEC 61000-4-2 ESD Contact Discharge per IEC 61000-4-2 Peak pulse power 8/20 s waveform Peak pulse current 8/20 s waveform Symbol VESD VESD PPPM IPPM Value 30 30 192 16 Unit kV kV W A
Thermal Characteristics
Ratings at 25 C, ambient temperature unless otherwise specified Parameter Operating Temperature Storage Temperature Symbol TJ TSTG Value - 40 to + 125 - 55 to + 150 Unit C C
Document Number 84702 Rev. 1.0, 04-Apr-05
F
1
1
2
19344
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VESD05A1-02V
Vishay Semiconductors Electrical Characteristics
(TA = 25 C unless otherwise specified) Parameter Reverse Stand-Off Voltage Max. Reverse current Max. Clamping voltage Max. Forward Clamping voltage Max. Peak pulse current Min. Reverse Breakdown Voltage Capacitance Forward voltage ESD-Clamping voltage (Overshoot) ESD-Clamping voltage (Undershoot) Test Conditions at max. reverse current at VR = 5 V at IPP = 16 A (Pin 2 to 1) Acc. IEC 61000-4-5 at IPP = 16 A (Pin 1 to 2) Acc. IEC 61000-4-5 Acc. IEC 61000-4-5 See Fig. 1 at IR = 1 mA at VR = 0 V ; f = 1 MHz at IF = 1 A ; tp < 300 s at + 8 kV ESD-pulse acc. IEC 61000-4-2 at - 8 kV ESD-pulse acc. IEC 61000-4-2 Synbol VRWM IR VC VF IPPM VBR CD VF VC-ESD VC-ESD - 16 6.0 6.8 130 1.0 + 50 - 50 Min. 5 < 0.1 10.5 3.2 1 12 4.5 16 7.5 150 1.5 Typ. Max. Unit V A V V A V pF V V V
Typical Characteristics (Tamb = 25 C unless otherwise specified)
100
8 s to 100 %
100 %
10
80 %
1 IPPM
60 %
20 s to 50 %
IF in mA
0.1 0.01 0.001
40 %
20 %
0%
19333
0
10
20 Time in s
30
40
19335
0.5
0.6
0.7
0.8
0.9
VF in V
Figure 1. 8/20 s Peak Pulse Current wave form acc. IEC 61000 - 4 - 5
Figure 3. Typical Forward Current IF vs. Forward voltage VF
150 f = 1MHz 125
8 7 6
100 5
CD in pF
75
VR in V 0 1 2 VR in V 3 4 5
19336
4 3 2
50
25 1 0
19334
0 0.01
0.1
1
10 IR in A
100
1000
10000
Figure 2. Typical Capacitance CD vs. Reverse Voltage VR
Figure 4. Typical Reverse Voltage VR vs. Reverse Current IR
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Document Number 84702 Rev. 1.0, 04-Apr-05
VESD05A1-02V
Vishay Semiconductors
12 Measured acc. IEC 61000-4-5 (8/20s - Waveform)
200 150 acc. IEC 61000-4-2 contact discharge
Reverse: Overshoot @ pos. ESD
10
Reverse
100 50
8
VC-ESD in V
VC in V
6
0 -50 -100 -150
Forward: Undershoot @ neg. ESD
4
Forward
2
0 0
19337
-200
4 8 IPP in A 12 16
19341
0
5
10
15 VESD in kV
20
25
30
Figure 5. Typical Clamping Voltage vs. Peak Pulse Current IPP
Figure 8. Typical max. Clamping voltage at ESD contact discharge (Acc. IEC 61000-4-2)
50 40 30 20
VC-ESD in V
VESD = - 8kV acc. IEC 61000-4-2
10 0 -10 -20 -30 -40 -50 -10
19338
0
10
20
30
40 t in ns
50
60
70
80
90
Figure 6. Typical Clamping performance on - 8 kV - ESD events (Acc. IEC 61000-4-2)
50 40 30 20
VESD = +8kV acc. IEC 61000-4-2
VC-ESD in V
10 0 -10 -20 -30 -40 -50 -10
0
10
20
30
40 t in ns
50
60
70
80
90
19339
Figure 7. Typical Clamping performance on + 8 kV - ESD events (Acc. IEC 61000-4-2)
Document Number 84702 Rev. 1.0, 04-Apr-05
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VESD05A1-02V
Vishay Semiconductors Application Note:
a) With the VESD05A1-02V one signal or data line (L1) can be clamped to ground. Due to the different clamping levels in forward and reverse direction the VESD05A1-02V clamping behavior is Bidirectional and Asymmetric (BiAs).
Transmitter
L1
Receiver
19342
Package Dimensions in mm (Inches)
0.15 (0.006)
ISO Method E
0.22 (0.008) 0.16 (0.006) 1.6 (0.062)
0.8 (0.031) Mounting Pad Layout 1.35 (0.053)
0.3 (0.012)
0.15 A
A 1.2 (0.047)
0.39 (0.015) 0.35 (0.014)
16864
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Document Number 84702 Rev. 1.0, 04-Apr-05
0.6 (0.023)
VESD05A1-02V
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 84702 Rev. 1.0, 04-Apr-05
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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